GaN Power Device Market Insights | Key players: Cree, Qorvo, MACOM
Added: (Tue Feb 19 2019)
Pressbox (Press Release) -
The GaN power device market is expected to reach USD 1,890.2 million by 2023 from USD 408.3 million in 2017, at a CAGR of 29.1% between 2017 and 2023. The market has been segmented on the basis of device type, voltage range, application, vertical, and geography.
Product launch and development has been the key strategies adopted by the players to strengthen their business and gain a competitive advantage in the GaN power device market. This strategy accounted for a share of 74% of the overall growth strategies adopted by the key players between January 2014 and October 2017. The ongoing research and developments in the GaN power device space have encouraged companies to adopt this strategy. In addition to product launches and developments, the companies also focus on agreements, acquisitions, and collaborations to expand their product portfolio, sales, and distribution network. This strategy significantly increased their market shares and strengthened their position in the overall GaN power device market. These strategies collectively accounted for 26% of the overall growth strategies adopted by the key market players between January 2014 and October 2017.
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Efficient Power Conversion Corporation (EPC) (US) manufactures enhancement-mode GaN power transistors. EPC has a broad portfolio of GaN products that features ultra-high frequency field-effect transistor (FETs), enhancement mode monolithic half-bridges, and demo boards. All its GaN-based products find applications in datacom/telecom DC–DC, envelope tracking, wireless power, space applications, light detection and ranging (LiDAR), class D audio amplifiers, power inverter, medical technology, wireless charging, multi-level AC–DC power supplies, synchronous rectification, robotics, and solar micro inverters. The company has strong research and development activities and has developed a proprietary enhancement-mode GaN technology, which would replace power MOSFETs and LDMOS solutions. EPC has already built and continues to develop a comprehensive IP portfolio including patents granted in China, Japan, South Korea, Taiwan, and the US. The company has signed a partnership with JJPlus Corporation (Taiwan) to design GaN-based wireless power solutions for wireless charging systems. Moreover, the company has collaborated with Freebird Semiconductor Corporation (US) and Integrated Device Technology, Inc. (US) to develop GaN-based products using its eGaN technology.
Qorvo (US) was formed in 2015 through the merger of RF Micro Devices (RFMD) (US) and TriQuint Semiconductor Inc. (US). The company is one of the leading suppliers of RF solutions with a broad product portfolio serving applications such as defense, base station, Wi-Fi customer premises equipment, optical, automotive connectivity, and smart home Internet of Things (IoT). The company is the major supplier of GaN-based products to the global defense and aerospace vertical and provides its services to the US government through contracts with the Defense Advanced Research Project Agency, the Air Force Research Laboratory, and the Office of Naval Research. The United States Department of Defense (DoD) has certified its GaN fabrication and production capabilities at Manufacturing Readiness Level 9, which is the highest in the industry. Moreover, the company is helping the industry with the ongoing 5G field trials with its current product portfolio. In 2016, the company had a remarkable growth in Wi-Fi, base station, and GaN product portfolio. Furthermore, in July 2015, the company signed a distribution agreement with Richardson RFPD (US), RFMW Ltd. (US), and Mouser Electronics (US) to market and sell its GaN-based products across the world.
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